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product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) 72mb pipelined and flow through synchronous nbt sram 300 mhz ? 167 mhz 2.5 v or 3.3 v v dd 2.5 v or 3.3 v i/o 119- & 209-bump bga commercial temp industrial temp rev: 1.02 5/2005 1/34 ? 2004, gsi technology specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. features ? nbt (no bus turn around) functionality allows zero wait read-write-read bus utilization; fully pin-compatible with both pipelined and flow through ntram?, nobl? and zbt? srams ? 2.5 v or 3.3 v +10%/?10% core power supply ? 2.5 v or 3.3 v i/o supply ? user-configurable pipeline and flow through mode ? zq mode pin for user-selectable high /low output drive ? ieee 1149.1 jtag-compatible boundary scan ? lbo pin for linear or interleave burst mode ? pin-compatible with 2mb, 4mb, 8mb, and 16mb devices ? byte write operation (9-bit bytes) ? 3 chip enable signals for easy depth expansion ? zz pin for automatic power-down ? jedec-standard 119- or 209-bump bga package ? pb-free 119- and 209-bum p bga packages available functional description the gs8642z18/36/72 is a 72mbit synchronous static sram. gsi's nbt srams, like zbt, ntram, nobl or other pipelined read/double late write or flow through read/ single late write srams, allow u tilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched fr om read to write cycles. because it is a synchronous devi ce, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. burst order control ( lbo ) must be tied to a power rail for proper operation. asynchronous inputs include the sleep mode enable (zz) and outp ut enable. output enable can be used to override the synchronous control of the output drivers and turn the ram's out put drivers off at any time. write cycles are internally self- timed and initiated by the rising edge of the clock input. this feature eliminates complex off- chip write pulse generation required by asynchronous srams and simplifies input signal timing. the gs8642z18/36/72 may be configured by the user to operate in pipeline or flow through mode. operating as a pipelined synchronous device, in addition to the rising-edge- triggered registers that capture input signals, the device incorporates a rising edge triggered output register. for read cycles, pipelined sram output data is temporarily stored by the edge-triggered output regi ster during the access cycle and then released to the output driv ers at the next rising edge of clock. the gs8642z18/36/72 is implemented with gsi's high performance cmos technology and is available in a jedec- standard 119-bump, 165-bump or 209-bump bga package. parameter synopsis -300 -250 -200 -167 unit pipeline 3-1-1-1 t kq (x18/x36) t kq (x72) tcycle 2.3 3.0 3.3 2.5 3.0 4.0 3.0 3.0 5.0 3.5 3.5 6.0 ns ns ns curr (x18) curr (x36) curr (x72) 400 480 590 340 410 520 290 350 435 260 305 380 ma ma ma flow through 2-1-1-1 t kq tcycle 5.5 5.5 6.5 6.5 7.5 7.5 8.0 8.0 ns ns curr (x18) curr (x36) curr (x72) 285 330 425 245 280 370 220 250 315 210 240 300 ma ma ma
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 2/34 ? 2004, gsi technology gs8642z72c pad out ?209-bump bga?top view 1 2 3 4 5 6 7 8 9 10 11 a dq g dq g a e2 a adv a e3 a dq b dq b a b dq g dq g bc bg nc w a bb bf dq b dq b b c dq g dq g bh bd nc e1 nc be ba dq b dq b c d dq g dq g v ss nc nc g nc nc v ss dq b dq b d e dqp g dqp c v ddq v ddq v dd v dd v dd v ddq v ddq dqp f dqp b e f dq c dq c v ss v ss v ss zq v ss v ss v ss dq f dq f f g dq c dq c v ddq v ddq v dd mch v dd v ddq v ddq dq f dq f g h dq c dq c v ss v ss v ss mcl v ss v ss v ss dq f dq f h j dq c dq c v ddq v ddq v dd mch v dd v ddq v ddq dq f dq f j k nc nc ck nc v ss cke v ss nc nc nc nc k l dq h dq h v ddq v ddq v dd ft v dd v ddq v ddq dq a dq a l m dq h dq h v ss v ss v ss mcl v ss v ss v ss dq a dq a m n dq h dq h v ddq v ddq v dd mch v dd v ddq v ddq dq a dq a n p dq h dq h v ss v ss v ss zz v ss v ss v ss dq a dq a p r dqp d dqp h v ddq v ddq v dd v dd v dd v ddq v ddq dqp a dqp e r t dq d dq d v ss nc nc lbo nc nc v ss dq e dq e t u dq d dq d nc a a a a a nc dq e dq e u v dq d dq d a a a a1 a a a dq e dq e v w dq d dq d tms tdi a a0 a tdo tck dq e dq e w 11 x 19 bump bga?14 x 22 mm 2 body?1 mm bump pitch (package c)
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 3/34 ? 2004, gsi technology gs8642z72 209-bump bg a pin description symbol type description a 0 , a 1 i address field lsbs and address counter preset inputs an i address inputs dq a dq b dq c dq d dq e dq f dq g dq h i/o data input and output pins b a , b b i byte write enable for dq a , dq b i/os; active low b c , b d i byte write enable for dq c , dq d i/os; active low b e , b f , b g , b h i byte write enable for dq e , dq f , dq g , dq h i/os; active low nc ? no connect ck i clock input signal; active high e 1 i chip enable; active low e 3 i chip enable; active low e 2 i chip enable; active high g i output enable; active low adv i burst address counter advance enable zz i sleep mode control; active high ft i flow through or pipeline mode; active low lbo i linear burst order mode; active low mch i must connect high mch i must connect high mcl must connect low w i write enable; active low zq i flxdrive output impedance control low = low impedance [high drive], high = high impedance [low drive] cke i clock enable; active low
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 4/34 ? 2004, gsi technology tms i scan test mode select tdi i scan test data in tdo o scan test data out tck i scan test clock v dd i core power supply v ss i i/o and core ground v ddq i output driver power supply gs8642z72 209-bump bg a pin description symbol type description
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 5/34 ? 2004, gsi technology gs8642z36b pad out ?119-bump bga?top view 1 2 3 4 5 6 7 a v ddq a a a a a v ddq a b nc e2 a adv a e3 nc b c nc a a v dd a a nc c d dqc dqpc v ss zq v ss dqpb dqb d e dqc dqc v ss e1 v ss dqb dqb e f v ddq dqc v ss g v ss dqb v ddq f g dqc dqc bc a bb dqb dqb g h dqc dqc v ss w v ss dqb dqb h j v ddq v dd nc v dd nc v dd v ddq j k dqd dqd v ss ck v ss dqa dqa k l dqd dqd bd nc ba dqa dqa l m v ddq dqd v ss cke v ss dqa v ddq m n dqd dqd v ss a1 v ss dqa dqa n p dqd dqpd v ss a0 v ss dqpa dqa p r nc a lbo v dd ft a nc r t nc a a a a a zz t u v ddq tms tdi tck tdo nc v ddq u 7 x 17 bump bga?14 x 22 mm 2 body?1.27 mm bump pitch
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 6/34 ? 2004, gsi technology gs8642z18b pad out ?119-bump bga?top view 1 2 3 4 5 6 7 a v ddq a a a a a v ddq a b nc e2 a adv a e3 nc b c nc a a v dd a a nc c d dqb nc v ss zq v ss dqpa nc d e nc dqb v ss e1 v ss nc dqa e f v ddq nc v ss g v ss dqa v ddq f g nc dqb bb a nc nc dqa g h dqb nc v ss w v ss dqa nc h j v ddq v dd nc v dd nc v dd v ddq j k nc dqb v ss ck v ss nc dqa k l dqb nc nc nc ba dqa nc l m v ddq dqb v ss cke v ss nc v ddq m n dqb nc v ss a1 v ss dqa nc n p nc dqpb v ss a0 v ss nc dqa p r nc a lbo v dd ft a nc r t a a a a a a zz t u v ddq tms tdi tck tdo nc v ddq u 7 x 17 bump bga?14 x 22 mm 2 body?1.27 mm bump pitch
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 7/34 ? 2004, gsi technology gs8642z18/36 119-bump bga pin description symbol type description a 0 , a 1 i address field lsbs and address counter preset inputs an i address inputs dq a dq b dq c dq d i/o data input and output pins b a , b b , b c , b d i byte write enable for dq a , dq b , dq c , dq d i/os; active low nc ? no connect ck i clock input signal; active high cke i clock enable; active low w i write enable; active low e 1 i chip enable; active low e 3 i chip enable; active low e 2 i chip enable; active high g i output enable; active low adv i burst address counter advance enable zz i sleep mode control; active high ft i flow through or pipeline mode; active low lbo i linear burst order mode; active low zq i flxdrive output impedance control low = low impedance [high drive], high = high impedance [low drive]) tms i scan test mode select tdi i scan test data in tdo o scan test data out tck i scan test clock v dd i core power supply v ss i i/o and core ground v ddq i output driver power supply bpr1999.05.18
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 8/34 ? 2004, gsi technology functional details clocking deassertion of the clock enable ( cke ) input blocks the clock input fr om reaching the ram's internal circuits. it may be used to suspend ram operations. failure to observ e clock enable set-up or hold requirem ents will result in erratic operation. pipeline mode read and write operations all inputs (with the exception of output enab le, linear burst order and sleep) are synchr onized to rising clock edges. single c ycle read and write operat ions must be initiated with the advance/ load pin (adv) held low, in order to load the new address. device activation is accomplished by asserting al l three of the chip enable inputs ( e 1 , e 2, and e 3 ). deassertion of an y one of the enable inputs will deactivate the device. function w b a b b b c b d read h x x x x write byte ?a? l l h h h write byte ?b? l h l h h write byte ?c? l h h l h write byte ?d? l h h h l write all bytes l l l l l write abort/nop l h h h h read operation is initiated when the following conditions are satisfied at the rising edge of clock: cke is asserted low, all three chip enables ( e 1 , e 2, and e 3 ) are active, the write enable input signals w is deasserted high, and adv is asserted low. the address presented to the address inputs is latched into the address register an d presented to the memory co re and control logic. the co ntrol logic determines that a read access is in progress and allows th e requested data to propagate to the input of the output regist er. at the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins. write operation occurs when the ram is sel ected, cke is active, and the write input is sampled low at the rising edge of clock. the byte write enable inputs ( b a , b b , b c, and b d ) determine which bytes will be written. all or none may be activated. a write cycle with no byte write inputs active is a no-op cycle. the pipelined nbt sram provides double late write functionality, matching the write command versus data pipe line length (2 cycles) to the read comman d versus data pipeline length (2 cycles). a t the first rising edge of clock, enable, writ e, byte write(s), and address are registered . the data in associated with that addr ess is required at the third rising edge of clock. flow through mode read and write operations operation of the ram in flow through mode is very similar to op erations in pipeline mode. activation of a read cycle and the use of the burst address counter is identical. in flow through mode the device may begin driving out new data immediately after new address are clocked into the ram, rather than holding new data until the following (second) clock edge. therefore, in flow through mode the read pipeline is one cycle shorter than in pipeline mode. write operations are initiated in the same way, but differ in th at the write pipeline is one cy cle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. while the pipelined nbt rams implement a double late write protocol in flow through mode a single late write protocol mode is observed. therefore, in flow through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second risin g edge of clock.
synchronous truth table operation type address ck cke adv w bx e 1 e 2 e 3 g zz dq notes read cycle, begin burst r external l-h l l h x l h l l l q read cycle, continue burst b next l-h l h x x x x x l l q 1,10 nop/read, begin burst r external l-h l l h x l h l h l high-z 2 dummy read, continue burst b next l-h l h x x x x x h l high-z 1,2,10 write cycle, begin burst w external l-h l l l l l h l x l d 3 write cycle, continue burst b next l-h l h x l x x x x l d 1,3,10 write abort, continue burst b next l-h l h x h x x x x l high-z 1,2,3,10 deselect cycle, power down d none l-h l l x x h x x x l high-z deselect cycle, power down d none l-h l l x x x x h x l high-z deselect cycle, power down d none l-h l l x x x l x x l high-z deselect cycle d none l-h l l l h l h l x l high-z 1 deselect cycle, continue d none l-h l h x x x x x x l high-z 1 sleep mode none x x x x x x x x x h high-z clock edge ignore, stall current l-h h x x x x x x x l - 4 notes: 1. continue burst cycles, whether read or wr ite, use the same control inputs. a deselect continue cycle can only be entered into if a dese - lect cycle is executed first. 2. dummy read and write abort can be considered nops because the sram performs no operation. a write abort occurs when the w pin is sampled low but no byte write pins are active so no writ e operation is performed. 3. g can be wired low to minimize the number of control signals provi ded to the sram. output drivers will automatically turn off du ring write cycles. 4. if cke high occurs during a pipelined read cycle, the dq bus will remain active (low z). if cke high occurs during a write cycle, the bus will remain in high z. 5. x = don?t care; h = logic high; l = logic low; bx = high = all byte write signals are high; bx = low = one or more byte/write signals are low 6. all inputs, except g and zz must meet setup and hold times of rising clock edge. 7. wait states can be inserted by setting cke high. 8. this device contains circuitry that ensur es all outputs are in high z during power-up. 9. a 2-bit burst counter is incorporated. 10. the address counter is incriminat ed for all burst continue cycles. product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 9/34 ? 2004, gsi technology
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 10/34 ? 2004, gsi technology deselect new read new write burst read burst write w r b r b w d d b b w r d b w r d d current state (n) next state (n+1) transition ? input command code key notes 1. the hold command (cke low) is not shown because it prevents any state change. 2. w, r, b, and d represent input command codes as indicated in t he synchronous truth table. clock (ck) command current state next state ? n n+1 n+2 n+3 ??? current state and next state definition for pipelined and flow th rough read/write co ntrol state diagram w r pipelined and fl ow through read write control state diagram
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 11/34 ? 2004, gsi technology intermediate intermediate intermediate intermediate intermediate intermediate high z (data in) data out (q valid) high z b w b r b d r w r w d d current state (n) next state (n+2) transition ? input command code key transition intermediate state (n+1) notes 1. the hold command (cke low) is not shown because it prevents any state change. 2. w, r, b, and d represent input command codes as indicated in the truth tables. clock (ck) command current state intermediate ? n n+1 n+2 n+3 ??? current state and next state definition for pipeline mode data i/o state diagram next state state pipeline mode da ta i/o state diagram
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 12/34 ? 2004, gsi technology high z (data in) data out (q valid) high z b w b r b d r w r w d d current state (n) next state (n+1) transition ? input command code key notes 1. the hold command (cke low) is not shown because it prevents any state change. 2. w, r, b, and d represent input command codes as indicated in the truth tables. clock (ck) command current state next state ? n n+1 n+2 n+3 ??? current state and next state definition for: pipeline and flow th rough read write c ontrol state diagram flow through mode da ta i/o state diagram
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 13/34 ? 2004, gsi technology burst cycles although nbt rams are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from read to write, multiple back-t o-back reads or writes may also be performed. nbt srams provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementatio ns. the adv control pin, when driven high, commands the sram to advance the internal address counter and use the c ounter generated address to read or write the sram. the starting address for the first cy cle in a burst cycle series is loaded into the sram by driving the adv pin low, into load mode. burst order the burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. the burst sequence is determined by the state of the linear burst order pin ( lbo ). when this pin is low, a linear burst sequence is selected. when the ram is installed with the lbo pi n tied high, interleaved burst se quence is selected. see the tab les below for details. flxdrive? the zq pin allows selection between nbt ram nominal drive strength (zq low) for multi-drop bus applications and low drive strength (zq floating or high) point-to-point applications . see the output driver char acteristics chart for details. mode pin functions mode name pin name state function burst order control lbo l linear burst h interleaved burst output register control ft l flow through h or nc pipeline power down control zz l or nc active h standby, i dd = i sb flxdrive output impedance control zq l high drive (low impedance) h or nc low drive (high impedance) note: thereis a are pull-up devicesonthe zq and ft pins and a pull-down device on t he zz pin, so thosethis input pins can be unconnected and the chip will operate in the default stat es as specified in the above tables.
note: the burst counter wraps to initial state on the 5th clock. note: the burst counter wraps to initial state on the 5th clock. linear burst sequence a[1:0] a[1:0] a[1:0] a[1:0] 1st address 00 01 10 11 2nd address 01 10 11 00 3rd address 10 11 00 01 4th address 11 00 01 10 interleaved burst sequence a[1:0] a[1:0] a[1:0] a[1:0] 1st address 00 01 10 11 2nd address 01 00 11 10 3rd address 10 11 00 01 4th address 11 10 01 00 product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 14/34 ? 2004, gsi technology burst counter sequences bpr 1999.05.18 sleep mode during normal operation, zz must be pulled low, either by the us er or by its internal pull down resistor. when zz is pulled hig h, the sram will enter a power sleep mode after 2 cycles. at this time, internal stat e of the sram is preserved. when zz returns t o low, the sram operates normally after 2 cycles of wake up time. sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to i sb 2. the duration of sleep mode is dictated by the length of time the zz is in a high state. after entering sleep mode, all inputs except zz become disabled and all outputs go to high-z the zz pin is an async hronous, active high input that cau ses the device to enter sleep mo de. when the zz pin is driven high, i sb 2 is guaranteed after the time tzzi is met. because zz is an asynchronous input, pending operations or operations in progress may not be properly completed if zz is asserted. therefore, sleep mode must not be initiat ed until valid pending operations are completed. similarly, when exitin g sleep mode during tzzr, only a deselect or read commands may be applied while the sram is recovering from sleep mode. sleep mode timing diagram tzzr tzzh tzzs tkltkl tkhtkh tkctkc ck zz designing for compatibility the gsi nbt srams offer users a configurable selection between flow through mode and pipeline mode via the ft signal. not all vendors offer this option, however most mark the pin v dd or v ddq on pipelined parts and v ss on flow through parts. gsi nbt srams are fully compatible with these sock ets. other vendors mark the pin as a no connect (nc). gsi rams have an internal pull-up device on the ft pin so a floating ft pin will result in pipelined operation. if the part being replaced is a pipelined mode part, the gsi ram is fully compatible with these sockets. in the unlikely event the part being replaced is a flow through devic e, the pin will need to be pul led low for correct operation.
absolute maximum ratings (all voltages reference to v ss ) symbol description value unit v dd voltage on v dd pins ? 0.5 to 4.6 v v ddq voltage in v ddq pins ? 0.5 to 4.6 v v i/o voltage on i/o pins ? 0.5 to v ddq +0.5 ( 4.6 v max.) v v in voltage on other input pins ? 0.5 to v dd +0.5 ( 4.6 v max.) v i in input current on any pin +/ ? 20 ma i out output current on any i/o pin +/ ? 20 ma p d package power dissipation 1.5 w t stg storage temperature ? 55 to 125 o c t bias temperature under bias ? 55 to 125 o c product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 15/34 ? 2004, gsi technology note: permanent damage to the device may occur if the absolute maximum ratings are exceeded. operation should be restricted to recomm ended operating conditions. exposure to conditions exceeding the absolute maximum ra tings, for an extended period of time, may affect reliability of this component. power supply voltage ranges parameter symbol min. typ. max. unit notes 3.3 v supply voltage v dd3 3.0 3.3 3.6 v 2.5 v supply voltage v dd2 2.3 2.5 2.7 v 3.3 v v ddq i/o supply voltage v ddq3 3.0 3.3 3.6 v 2.5 v v ddq i/o supply voltage v ddq2 2.3 2.5 2.7 v notes: 1. the part numbers of industrial temperatur e range versions end the character ?i?. un less otherwise noted, all performance spe cifica - tions quoted are evaluated for worst case in the temperature range marked on the device. 2. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% tkc.
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 16/34 ? 2004, gsi technology v ddq3 range logic levels parameter symbol min. typ. max. unit notes v dd input high voltage v ih 2.0 ? v dd + 0.3 v 1 v dd input low voltage v il ? 0.3 ? 0.8 v 1 v ddq i/o input high voltage v ihq 2.0 ? v ddq + 0.3 v 1,3 v ddq i/o input low voltage v ilq ? 0.3 ? 0.8 v 1,3 notes: 1. the part numbers of industrial temperatur e range versions end the character ?i?. un less otherwise noted, all performance spe cifica - tions quoted are evaluated for worst case in the temperature range marked on the device. 2. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% tkc. 3. v ihq (max) is voltage on v ddq pins plus 0.3 v. v ddq2 range logic levels parameter symbol min. typ. max. unit notes v dd input high voltage v ih 0.6*v dd ? v dd + 0.3 v 1 v dd input low voltage v il ? 0.3 ? 0.3*v dd v 1 v ddq i/o input high voltage v ihq 0.6*v dd ? v ddq + 0.3 v 1,3 v ddq i/o input low voltage v ilq ? 0.3 ? 0.3*v dd v 1,3 notes: 1. the part numbers of industrial temperatur e range versions end the character ?i?. un less otherwise noted, all performance spe cifica - tions quoted are evaluated for worst case in the temperature range marked on the device. 2. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% tkc. 3. v ihq (max) is voltage on v ddq pins plus 0.3 v. recommended operating temperatures parameter symbol min. typ. max. unit notes ambient temperature (com mercial range versions) t a 0 25 70 c 2 ambient temperature (industrial range versions) t a ? 40 25 85 c 2 notes: 1. the part numbers of industrial temperatur e range versions end the character ?i?. un less otherwise noted, all performance spe cifica - tions quoted are evaluated for worst case in the temperature range marked on the device. 2. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% tkc.
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 17/34 ? 2004, gsi technology 20% tkc v ss ? 2.0 v 50% v ss v ih undershoot measurement and timing overshoot measurement and timing 20% tkc v dd + 2.0 v 50% v dd v il capacitance o c, f = 1 mh z , v dd parameter symbol test conditions typ. max. unit input capacitance c in v in = 0 v 4 5 pf input/output capacitance c i/o v out = 0 v 6 7 pf note: these parameters are sample tested. ac test conditions parameter conditions input high level v dd ? 0.2 v input low level 0.2 v input slew rate 1 v/ns input reference level v ddq /2 output reference level v ddq /2 output load fig. 1 notes: 1. include scope and jig capacitance. 2. test conditions as specified with output loading as shown in fig. 1 unless otherwise noted. 3. device is deselected as defined by the truth table. dq v ddq/2 50 ? 30pf * output load 1 * distributed test jig capacitance (t a = 25 = 2.5 v)
dc electrical characteristics parameter symbol test conditions min max input leakage current (except mode pins) i il v in = 0 to v dd ? 2 ua 2 ua zzinput current i in1 v dd v in v ih 0 v v in v ih ? 1 ua ? 1 ua 1 ua 100 ua output leakage current (x36/x72) i ol output disable, v out = 0 to v dd ? 1 ua 1 ua output leakage current (x18) i ol output disable, v out = 0 to v dd ? 1 ua 1 ua output high voltage v oh2 i oh = ? 8 ma, v ddq = 2.375 v 1.7 v ? output high voltage v oh3 i oh = ? 8 ma, v ddq = 3.135 v 2.4 v ? output low voltage v ol i ol = 8 ma ? 0.4 v product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 18/34 ? 2004, gsi technology
operating currents parameter test conditions mode symbol -300 -250 -200 -167 unit 0 to 70c ? 40 to 85c 0 to 70c ? 40 to 85c 0 to 70c ? 40 to 85c 0 to 70c ? 40 to 85c operating current device selected; all other inputs v ih o r v il output open (x72) pipeline i dd i ddq 520 70 540 70 460 60 480 60 385 50 405 50 340 40 360 40 ma flow through i dd i ddq 375 50 385 50 330 40 340 40 285 30 295 30 270 30 280 30 ma (x32/ x36) pipeline i dd i ddq 420 60 440 60 360 50 380 50 310 40 330 40 270 35 290 35 ma flow through i dd i ddq 300 30 320 30 255 25 275 25 230 20 250 20 220 20 240 20 ma (x18) pipeline i dd i ddq 370 30 390 30 315 25 335 25 270 20 290 20 240 20 260 20 ma flow through i dd i ddq 270 15 290 15 230 15 250 15 205 15 225 15 195 15 215 15 ma standby current zz v dd ? 0.2 v ? pipeline i sb 100 120 100 120 100 120 100 120 ma flow through i sb 100 120 100 120 100 120 100 120 ma deselect current device deselected; all other inputs v ih or v il ? pipeline i dd 150 165 140 155 130 146 125 140 ma flow through i dd 135 150 125 140 120 135 120 135 ma product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 19/34 ? 2004, gsi technology notes: 1. i dd and i ddq apply to any combination of v dd3 , v dd2 , v ddq3 , and v ddq2 operation. 2. all parameters listed are worst case scenario.
ac electrical characteristics parameter symbol -300 -250 -200 -167 unit min max min max min max min max pipeline clock cycle time tkc 3.3 ? 4.0 ? 5.0 ? 6.0 ? ns clock to output valid (x18/x36) tkq ? 2.3 ? 2.5 ? 3.0 ? 3.5 ns clock to output valid (x72) tkq ? 3.0 ? 3.0 ? 3.0 ? 3.5 ns clock to output invalid tkqx 1.5 ? 1.5 ? 1.5 ? 1.5 ? ns clock to output in low-z tlz 1 1.5 ? 1.5 ? 1.5 ? 1.5 ? ns setup time ts 1.1 ? 1.2 ? 1.4 ? 1.5 ? ns hold time th 0.1 ? 0.2 ? 0.4 ? 0.5 ? ns flow through clock cycle time tkc 5.5 ? 6.5 ? 7.5 ? 8.0 ? ns clock to output valid tkq ? 5.5 ? 6.5 ? 7.5 ? 8.0 ns clock to output invalid tkqx 3.0 ? 3.0 ? 3.0 ? 3.0 ? ns clock to output in low-z tlz 1 3.0 ? 3.0 ? 3.0 ? 3.0 ? ns setup time ts 1.5 ? 1.5 ? 1.5 ? 1.5 ? ns hold time th 0.5 ? 0.5 ? 0.5 ? 0.5 ? ns clock high time tkh 1.0 ? 1.3 ? 1.3 ? 1.3 ? ns clock low time tkl 1.2 ? 1.5 ? 1.5 ? 1.5 ? ns clock to output in high-z (x18/x36) thz 1 1.5 2.3 1.5 2.5 1.5 3.0 1.5 3.0 ns clock to output in high-z (x72) thz 1 1.5 3.0 1.5 3.0 1.5 3.0 1.5 3.0 ns g to output valid (x18/x36) toe ? 2.3 ? 2.5 ? 3.0 ? 3.5 ns g to output valid (x72) toe ? 3.0 ? 3.0 ? 3.0 ? 3.5 ns g to output in low-z tolz 1 0 ? 0 ? 0 ? 0 ? ns g to output in high-z (x18/36) tohz 1 ? 2.3 ? 2.5 ? 3.0 ? 3.0 ns g to output in high-z (x72) tohz 1 ? 3.0 ? 3.0 ? 3.0 ? 3.0 ns zz setup time tzzs 2 5 ? 5 ? 5 ? 5 ? ns zz hold time tzzh 2 1 ? 1 ? 1 ? 1 ? ns zz recovery tzzr 20 ? 20 ? 20 ? 20 ? ns product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 20/34 ? 2004, gsi technology notes: 1. these parameters are sampled and are not 100% tested. 2. zz is an asynchronous signal. however, in order to be recogniz ed on any given clock cycle, zz mu st meet the specified setup a nd hold times as specified above.
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 21/34 ? 2004, gsi technology pipeline mode timing (nbt) write a read b suspend read c write d writeno-op read e deselect thz tkqx tkq tlz th ts th ts th ts th ts th ts th ts th ts th ts tkctkc tkltkl tkhtkh ab cd e d(a) d(d) q(e) q(b) q(c) ck a cke e * adv w bn dq
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 22/34 ? 2004, gsi technology flow through mode timing (nbt) write a write b write b+1 read c cont read d write e read f write g d(a) d(b) d(b+1) q(c) q(d) d(e) q(f) d(g) tolz toe tohz tkqx tkq tlz thz tkqx tkq tlz th ts th ts th ts th ts th ts th ts th ts tkctkc tkltkl tkhtkh ab c defg *note: e = high(false) if e1 = 1 or e2 = 0 or e3 = 1 ck cke e adv w bn a0?an dq g jtag port operation overview the jtag port on this ram operates in a manner that is compliant with ieee standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as jtag). the jtag port input inte rface levels scale with v dd . the jtag output drivers are powered by v ddq . disabling the jtag port it is possible to use this device without utilizing the jtag port. the port is reset at power-up and will remain inactive unles s clocked. tck, tdi, and tms are designed with internal pull-up circuits.to assure normal operation of the ram with the jtag port unused, tck, tdi, and tms may be left floating or tied to either v dd or v ss . tdo should be left unconnected.
jtag pin descriptions pin pin name i/o description tck test clock in clocks all tap events. all i nputs are captured on the rising edge of tck and all outputs propagate from the falling edge of tck. tms test mode select in the tms input is sampled on the rising edge of tck. this is the command input for the tap controller state machine. an undriven tms input wi ll produce the same result as a logic one input level. tdi test data in in the tdi input is sampled on the rising edge of tck. this is the input side of the serial registers placed between tdi and tdo. the register pl aced between tdi and tdo is determined by the state of the tap controller state machine and the instruction that is currently loaded in the tap instruction register (refer to the tap controll er state diagram). an undriven tdi pin will produce the same result as a logic one input level. tdo test data out out output that is active depending on the state of the tap state machine. output changes in response to the falling edge of tck. this is the out put side of the serial registers placed between tdi and tdo. note: this device does not have a trst (tap rese t) pin. trst is optional in ieee 1149.1. the test-logic-reset state is entered while tms is held high for five rising edges of tck. the tap cont roller is also reset automaticly at power-up. product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 23/34 ? 2004, gsi technology jtag port registers overview the various jtag registers, refered to as test access port ortap registers, are select ed (one at a time) via the sequences of 1 s and 0s applied to tms as tck is strobed. each of the tap regist ers is a serial shift register that captures serial input data o n the rising edge of tck and pushes serial data out on the next falling edge of tck. when a register is selected, it is placed betwe en the tdi and tdo pins. instruction register the instruction register holds the instructi ons that are executed by the ta p controller when it is moved into the run, test/idl e, or the various data register states. instructions are 3 bits long. th e instruction register can be lo aded when it is placed betwee n the tdi and tdo pins. the instruction register is automatically preloa ded with the idcode instruction at power-up or whenever the controller is placed in test-logic-reset state. bypass register the bypass register is a single bit register that can be placed between tdi and tdo. it allows serial test data to be passed th rough the ram?s jtag port to another device in the scan chain with as little delay as possible. boundary scan register the boundary scan register is a collection of flip flops that can be preset by the logic level found on the ram?s input or i/o pins. the flip flops are then daisy chained togeth er so the levels found can be shifted seri ally out of the jtag port?s tdo pin. the boundary scan register also includes a number of place holder flip fl ops (always set to a logic 1). the relationship between t he device pins and the bits in the boundary scan register is de scribed in the scan order table following. the boundary scan register, under the control of the tap contro ller, is loaded with the contents of the rams i/o ring when the controller is in capture-dr state and then is placed between the tdi and tdo pins when the controller is moved to shift- dr state. sample-z, sample/preload and extest instructions can be us ed to activate the boundary scan register.
instruction register id code register boundary scan register 0 1 2 0 31 30 29 1 2 0 bypass register tdi tdo tms tck test access port (tap) controller 108 1 0 control signals product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 24/34 ? 2004, gsi technology jtag tap block diagram identification (id) register the id register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in capture-dr state with the idcode command loaded in the instruction re gister. the code is loaded from a 32-bit on-chip rom. it describes various attributes of the ram as indicated below. the register is then placed between the tdi and tdo pins when th e controller is moved into shift- dr state. bit 0 in the register is the lsb and the first to reach tdo when shifting begins.
id register contents die revision code not used i/o configuration gsi technology jedec vendor id code presence register bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 x72 x x x x 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 0 1 1 0 0 1 1 x36 x x x x 0 0 0 x 1 0 0 1 0 0 0 0 1 0 0 0 0 0 0 1 1 0 1 1 0 0 1 1 x32 x x x x 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 1 1 0 1 1 0 0 1 1 x18 x x x x 0 0 0 x 1 0 0 1 0 0 0 0 1 0 1 0 0 0 0 1 1 0 1 1 0 0 1 1 x16 x x x x 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 0 1 1 0 1 1 0 0 1 1 product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 25/34 ? 2004, gsi technology tap controller instruction set overview there are two classes of instructions defined in the standard 1149.1-1990; the standard (public) instructions, and device speci fic (private) instructions. some public instructions are mandator y for 1149.1 compliance. optional public instructions must be implemented in prescribed ways. the tap on th is device may be used to monitor all inpu t and i/o pads, and can be used to load address, data or control signals into the ram or to preload the i/o buffers. when the tap controller is placed in captur e-ir state the two least significant bits of the instruction regi ster are loaded wit h 01. when the controller is moved to the shift-ir state the instructi on register is placed between tdi and tdo. in this state the de sired instruction is serially loaded through the tdi input (while the previous contents are shifted out at tdo). for all instructions , the tap executes newly loaded instruct ions only when the controller is moved to update-ir state. the tap instruction set for this device is listed in the following table.
select dr capture dr shift dr exit1 dr pause dr exit2 dr update dr select ir capture ir shift ir exit1 ir pause ir exit2 ir update ir test logic reset run test idle 0 0 1 0 1 1 0 0 1 1 1 0 0 1 1 0 0 0 0 1 1 0 0 1 10 0 0 1 11 1 product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 26/34 ? 2004, gsi technology jtag tap controller state diagram instruction descriptions bypass when the bypass instruction is loaded in the instruction register the bypass regi ster is placed between tdi and tdo. this occurs when the tap controller is moved to the shift-dr state. this allows the board level scan path to be shortened to facili - tate testing of other devices in the scan path. sample/preload sample/preload is a standard 1149.1 mandatory public in struction. when the sample / preload instruction is loaded in the instruction register, moving the tap controller into the capture-dr state loads the data in the rams input and i/o buffers into the boundary scan register. boundary scan regist er locations are not associated with an input or i/o pin, and are loaded with the default stat e identified in the boundary s can chain table at the end of th is section of the datasheet. beca use the ram clock is independent from the tap clock (tck) it is possible for the tap to attempt to capture the i/o ring contents while the input buffers are in transition (i.e. in a metastable state). although allowing the tap to sample metastable inputs w ill not harm the device, repeatable results cannot be expected. ram input signals must be stabilized for long enough to meet the taps input data capture set-up plus hold time (tts plus tth) . the rams clock inputs need not be paused for any other tap operation except capturing the i/o ring contents into the boundary s can register. moving the contro ller to shift-dr state then places the boundary scan register between the tdi and tdo pins. extest extest is an ieee 1149.1 mandatory public instruction. it is to be executed whenever the instru ction register is loaded with all logic 0s. the extest command does not block or override th e ram?s input pins; therefore, the ram?s internal state is still determined by its input pins.
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 27/34 ? 2004, gsi technology typically, the boundary scan re gister is loaded with the desired pattern of data with the sample/preload command. then the extest command is used to outp ut the boundary scan register?s contents, in parallel, on the ram?s data output drivers on the falling edge of tck when the controller is in the update-ir state. alternately, the boundary scan register may be loaded in parallel using the extest command. when the extest instruc - tion is selected, the sate of all the ram?s input and i/o pins, as well as the default values at scan register locations not as so - ciated with a pin, are transfer red in parallel into the boundary scan regist er on the rising edge of tck in the capture-dr state, the ram?s output pins drive out the value of the boundar y scan register location with which each output pin is associ - ated. idcode the idcode instruction causes the id rom to be loaded into the id register when the controller is in capture-dr mode and places the id register between the tdi a nd tdo pins in shift-dr mode. the idcode instruction is the default instruction loaded in at power up and any time the controller is placed in the test-logic-reset state. sample-z if the sample-z instruction is loaded in the instruction register, all ram outputs are forced to an inactiv e drive state (high- z) and the boundary scan register is connected between tdi and t do when the tap controller is moved to the shift-dr state. rfu these instructions are reserved fo r future use. in this device they replicate the bypass instruction. jtag tap instruction set summary instruction code description notes extest 000 places the boundary scan re gister between tdi and tdo. 1 idcode 001 preloads id register and places it between tdi and tdo. 1, 2 sample-z 010 captures i/o ring contents. places the b oundary scan register between tdi and tdo. forces all ram output drivers to high-z. 1 rfu 011 do not use this instruction; reserved for future use. replicates bypass instruction. places bypass register between tdi and tdo. 1 sample/ preload 100 captures i/o ring contents. places the b oundary scan register between tdi and tdo. 1 gsi 101 gsi private instruction. 1 rfu 110 do not use this instruction; reserved for future use. replicates bypass instruction. places bypass register between tdi and tdo. 1 bypass 111 places bypass register between tdi and tdo. 1 notes: 1. instruction codes expressed in binary, msb on left, lsb on right. 2. default instruction automatically loaded at power-up and in test-logic-reset state.
jtag port recommended operating conditions and dc characteristics parameter symbol min. max. unit notes 3.3 v test port input high voltage v ihj3 2.0 v dd3 +0.3 v 1 3.3 v test port input low voltage v ilj3 ? 0.3 0.8 v 1 2.5 v test port input high voltage v ihj2 0.6 * v dd2 v dd2 +0.3 v 1 2.5 v test port input low voltage v ilj2 ? 0.3 0.3 * v dd2 v 1 tms, tck and tdi input leakage current i inhj ? 300 1 ua 2 tms, tck and tdi input leakage current i inlj ? 1 100 ua 3 tdo output leakage current i olj ? 1 1 ua 4 test port output high voltage v ohj 1.7 ? v 5, 6 test port output low voltage v olj ? 0.4 v 5, 7 test port output cmos high v ohjc v ddq ? 100 mv ? v 5, 8 test port output cmos low v oljc ? 100 mv v 5, 9 notes: 1. input under/overshoot voltage must be ? 2 v > vi < v ddn +2 v not to exceed 4.6 v maximum, with a pulse width not to exceed 20% ttkc. 2. v ilj v in v ddn 3. 0 v v in v iljn 4. output disable, v out = 0 to v ddn 5. the tdo output driver is served by the v ddq supply. 6. i ohj = ? 4 ma 7. i olj = + 4 ma 8. i ohjc = ?100 ua 9. i oljc = +100 ua product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 28/34 ? 2004, gsi technology notes: 1. include scope and jig capacitance. 2. test conditions as shown unless otherwise noted. jtag port ac test conditions parameter conditions input high level v dd ? 0.2 v input low level 0.2 v input slew rate 1 v/ns input reference level v ddq /2 output reference level v ddq /2 dq v ddq /2 50 ? 30pf * jtag port ac test load * distributed test jig capacitance
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 29/34 ? 2004, gsi technology jtag port timing diagram tth tts ttkq tth tts tth tts ttklttkl ttkhttkh ttkcttkc tck tdi tms tdo parallel sram input jtag port ac electrical characteristics parameter symbol min max unit tck cycle time ttkc 50 ? ns tck low to tdo valid ttkq ? 20 ns tck high pulse width ttkh 20 ? ns tck low pulse width ttkl 20 ? ns tdi & tms set up time tts 10 ? ns tdi & tms hold time tth 10 ? ns boundary scan (bsdl files) for information regarding the boundary scan chain, or to obta in bsdl files for this part, please contact our applications engineering department at: apps@gsitechnology.com .
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 30/34 ? 2004, gsi technology 209 bga package dr awing (package c) 14 mm x 22 mm body, 1.0 mm bump pitch, 11 x 19 bump array a a1 c ? b e e e e1 d1 d aaa bottom view side view symbol min typ max units a 1.70 mm a1 0.40 0.50 0.60 mm ? b 0.50 0.60 0.70 mm c 0.31 0.36 0.38 mm d 21.9 22.0 22.1 mm d1 18.0 (bsc) mm e 13.9 14.0 14.1 mm e1 10.0 (bsc) mm e 1.00 (bsc) mm aaa 0.15 mm rev 1.0
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 31/34 ? 2004, gsi technology package dimensions?119-bump fpbga (package b, variation 2 ) a b c d e f g h j k l m n p r t u 1 2 3 4 5 6 7 7 6 5 4 3 2 1 a1 top view a1 bottom view 1.27 7.62 1.27 20.32 140.10 220.10 b a 0.20(4x) ?0.10 ?0.30 c c a b s s ?0.60~0.90 (119x) c seating plane 0.15 c 0.50~0.70 1.86.0.13 0.700.05 0.15 c a b c d e f g h j k l m n p r t u 0.560.05 s s
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 32/34 ? 2004, gsi technology ordering information for gsi synchronous burst rams org part number 1 type package speed 2 (mhz/ns) t a 3 4m x 18 gs8642z18b-300 nbt pipeline/flow through 119 bga (var.2) 300/5.5 c 4m x 18 gs8642z18b-250 nbt pipeline/flow through 119 bga (var.2) 250/6.5 c 4m x 18 gs8642z18b-200 nbt pipeline/flow through 119 bga (var.2) 200/7.5 c 4m x 18 gs8642z18b-167 nbt pipeline/flow through 119 bga (var.2) 167/8 c 2m x 36 gs8642z36b-300 nbt pipeline/flow through 119 bga (var.2) 300/5.5 c 2m x 36 gs8642z36b-250 nbt pipeline/flow through 119 bga (var.2) 250/6.5 c 2m x 36 gs8642z36b-200 nbt pipeline/flow through 119 bga (var.2) 200/7.5 c 2m x 36 gs8642z36b-167 nbt pipeline/flow through 119 bga (var.2) 167/8 c 1m x 72 gs8642z72c-300 nbt pipeline/flow through 209 bga 300/5.5 c 1m x 72 gs8642z72c-250 nbt pipeline/flow through 209 bga 250/6.5 c 1m x 72 gs8642z72c-200 nbt pipeline/flow through 209 bga 200/7.5 c 1m x 72 gs8642z72c-167 nbt pipeline/flow through 209 bga 167/8 c 4m x 18 gs8642z18b-300i nbt pipeline/flow through 119 bga (var.2) 300/5.5 i 4m x 18 GS8642Z18B-250I nbt pipeline/flow through 119 bga (var.2) 250/6.5 i 4m x 18 gs8642z18b-200i nbt pipeline/flow through 119 bga (var.2) 200/7.5 i 4m x 18 gs8642z18b-167i nbt pipeline/flow through 119 bga (var.2) 167/8 i 2m x 36 gs8642z36b-300i nbt pipeline/flow through 119 bga (var.2) 300/5.5 i 2m x 36 gs8642z36b-250i nbt pipeline/flow through 119 bga (var.2) 250/6.5 i 2m x 36 gs8642z36b-200i nbt pipeline/flow through 119 bga (var.2) 200/7.5 i 2m x 36 gs8642z36b-167i nbt pipeline/flow through 119 bga (var.2) 167/8 i 1m x 72 gs8642z72c-300i nbt pipeline/flow through 209 bga 300/5.5 i 1m x 72 gs8642z72c-250i nbt pipeline/flow through 209 bga 250/6.5 i 1m x 72 gs8642z72c-200i nbt pipeline/flow through 209 bga 200/7.5 i 1m x 72 gs8642z72c-167i nbt pipeline/flow through 209 bga 167/8 i notes: 1. customers requiring delivery in tape and r eel should add the character ?t? to the end of the part number. example: gs8642z18b -167ib. 2. the speed column indicates the cycle frequenc y (mhz) of the device in pipeline mode and the latency (ns) in flow through mod e. each device is pipeline/flow through mode-selectable by the user. 3. t a = c = commercial temperature range. t a = i = industrial temperature range. 4. gsi offers other versions this type of device in many differ ent configurations and with a variety of different features, on ly some of which are covered in this data sheet. see the gsi technology web site ( www.gsitechnology.com ) for a complete listing of current offerings.
product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 33/34 ? 2004, gsi technology 4m x 18 gs8642z18gb-300 nbt pipeline/flow through pb-free 119 bga (var.2) 300/5.5 c 4m x 18 gs8642z18gb-250 nbt pipeline/flow through pb-free 119 bga (var.2) 250/6.5 c 4m x 18 gs8642z18gb-200 nbt pipeline/flow through pb-free 119 bga (var.2) 200/7.5 c 4m x 18 gs8642z18gb-167 nbt pipeline/flow through pb-free 119 bga (var.2) 167/8 c 2m x 36 gs8642z36gb-300 nbt pipeline/flow through pb-free 119 bga (var.2) 300/5.5 c 2m x 36 gs8642z36gb-250 nbt pipeline/flow through pb-free 119 bga (var.2) 250/6.5 c 2m x 36 gs8642z36gb-200 nbt pipeline/flow through pb-free 119 bga (var.2) 200/7.5 c 2m x 36 gs8642z36gb-167 nbt pipeline/flow through pb-free 119 bga (var.2) 167/8 c 1m x 72 gs8642z72gc-300 nbt pipeline/flow through pb-free 209 bga 300/5.5 c 1m x 72 gs8642z72gc-250 nbt pipeline/flow through pb-free 209 bga 250/6.5 c 1m x 72 gs8642z72gc-200 nbt pipeline/flow through pb-free 209 bga 200/7.5 c 1m x 72 gs8642z72gc-167 nbt pipeline/flow through pb-free 209 bga 167/8 c 4m x 18 gs8642z18gb-300i nbt pipeline/flow through pb-free 119 bga (var.2) 300/5.5 i 4m x 18 gs8642z18gb-250i nbt pipeline/flow through pb-free 119 bga (var.2) 250/6.5 i 4m x 18 gs8642z18gb-200i nbt pipeline/flow through pb-free 119 bga (var.2) 200/7.5 i 4m x 18 gs8642z18gb-167i nbt pipeline/flow through pb-free 119 bga (var.2) 167/8 i 2m x 36 gs8642z36gb-300i nbt pipeline/flow through pb-free 119 bga (var.2) 300/5.5 i 2m x 36 gs8642z36gb-250i nbt pipeline/flow through pb-free 119 bga (var.2) 250/6.5 i 2m x 36 gs8642z36gb-200i nbt pipeline/flow through pb-free 119 bga (var.2) 200/7.5 i 2m x 36 gs8642z36gb-167i nbt pipeline/flow through pb-free 119 bga (var.2) 167/8 i 1m x 72 gs8642z72gc-300i nbt pipeline/flow through pb-free 209 bga 300/5.5 i 1m x 72 gs8642z72gc-250i nbt pipeline/flow through pb-free 209 bga 250/6.5 i 1m x 72 gs8642z72gc-200i nbt pipeline/flow through pb-free 209 bga 200/7.5 i 1m x 72 gs8642z72gc-167i nbt pipeline/flow through pb-free 209 bga 167/8 i ordering information for gsi synchronous burst rams (cont.) org part number 1 type package speed 2 (mhz/ns) t a 3 notes: 1. customers requiring delivery in tape and r eel should add the character ?t? to the end of the part number. example: gs8642z18b -167ib. 2. the speed column indicates the cycle frequenc y (mhz) of the device in pipeline mode and the latency (ns) in flow through mod e. each device is pipeline/flow through mode-selectable by the user. 3. t a = c = commercial temperature range. t a = i = industrial temperature range. 4. gsi offers other versions this type of device in many differ ent configurations and with a variety of different features, on ly some of which are covered in this data sheet. see the gsi technology web site (www.gsitechnology.com ) for a complete listing of current offerings.
72mb sync sram datasheet revision history ds/daterev. code: old; new types of changes format or content page;revisions;reason 8642zxx_r1 ? creation of new datasheet 8642zxx_r1; 8642zxx_r1_01 content ? changed ?e? package to ?f? ? added pb-free information 8642zxx_r1_01; 8642zxx_r1_02 content ? removed f package entirely product preview gs8642z18(b)/gs8642z 36(b)/gs8642z72(c) specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.02 5/2005 34/34 ? 2004, gsi technology

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